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Proceedings Paper

Process optimization of positive novolac resists for electron-beam lithography resist characterization using single or multiple development steps with either a sodium-hydroxide or metal ion-free dev
Author(s): Robert L. Dean; Gary E. Flores
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Paper Abstract

OCG895i and Tokyo Ohka OEBR2000 (both commercially available) and two experimental resists were evaluated by experimental design. The design factors investigated included developer normality, softbake temperature, and develop time with a sodium hydroxide-based developer. The design responses included optimum dose, remaining film thickness, and dose latitude (change in critical dimension per unit dose). The best results were given by AZ141C, an experimental resist from Hoechst. At 90 degree(s)C prebaking temperature, AZ141C could be imaged at 4.0 (mu) C/cm2 with good film thickness retention and dose latitude. A second set of optimization experiments was done evaluating metal ion-free developer. Finally, multiple develop processing was evaluated for improving process latitude and film thickness loss and for minimizing the dose required. A two-step process shows promise: it consists of a high initial normality develop for a short time to accomplish breakthrough of the resist surface inhibition layer, followed by a second low normality develop. Another sequence of statistically designed experiments performed to optimize this scheme and results of the optimizations are presented.

Paper Details

Date Published: 15 September 1993
PDF: 14 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154808
Show Author Affiliations
Robert L. Dean, Etec Systems, Inc. (United States)
Gary E. Flores, Ultratech Stepper (United States)

Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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