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Proceedings Paper

Simulation of self-diffusion effects of silylated polymers during dry development
Author(s): Ulrich A. Jagdhold; Hartmut H. Erzgraeber
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Paper Abstract

A model is presented to study self diffusion effects of silylated polymers during dry development. The effect is discussed in connection with mechanisms of the formation of the oxide mask during different O2-RIE conditions. Furthermore, the influence on the CD control is outlined.

Paper Details

Date Published: 15 September 1993
PDF: 11 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154805
Show Author Affiliations
Ulrich A. Jagdhold, Institut fuer Halbleiterphysik GmbH (Germany)
Hartmut H. Erzgraeber, Institut fuer Halbleiterphysik GmbH (Germany)


Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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