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Proceedings Paper

Influence of process parameters on the lithographic performance characterization in the top imaging process by silylation
Author(s): Tai-Kyung Won; Seung-Chan Moon; Hyeong-Soo Kim; Jin-Woong Kim; Myung-Seon Kim; Dong-Jun Ahn; Soo-Han Choi
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Paper Abstract

Single level dry developable resist process based on gas phase silylation has great promise for sub-halfmicron pattern imaging due to shallow exposure, which leads to a thin silicon incorporation layer during silylation process in the top exposed region. In this paper the influence of process key parameters on the lithographic performance characterization has been investigated. For this experiment, two kinds of commercial i-line photoresists based upon novolac-diazoquinone and tetramethyldisilazane as a silylation agent were used for analyzing the process properties. As a result, it was observed that the ultimate resolution of 0.30 micrometers with vertical profiles, projected with an i-line of 0.54 NA lens, was obtained. However, it was found that CD linearity characteristics strongly depend on the compositions and the structure of photoresist, independent of other process parameters. Selectivity of dry development with a range of 13 - 15 was achieved using the oxygen/argon mixtures at 5 mTorr with MERIE. Major factors affect on the resist pattern profile were proven to be dry development parameters as well as the latent image formation of silylation. In particular, lower power and higher magnetic field conditions at low pressure allowed a good resist pattern profile without sidewall roughness and residues. And effects of silylation parameters on process latitudes has also been studied by comparing resolution capability, DOF, and exposure latitude, respectively.

Paper Details

Date Published: 15 September 1993
PDF: 12 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154804
Show Author Affiliations
Tai-Kyung Won, Hyundai Electronics Industries Co., Ltd. (South Korea)
Seung-Chan Moon, Hyundai Electronics Industries Co., Ltd. (South Korea)
Hyeong-Soo Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Jin-Woong Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Myung-Seon Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Dong-Jun Ahn, Hyundai Electronics Industries Co., Ltd. (South Korea)
Soo-Han Choi, Hyundai Electronics Industries Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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