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Proceedings Paper

Effects of absorptive dye loading and substrate reflectivity on a 0.5-micron i-line photoresists process
Author(s): Jeffrey R. Johnson; Gregory J. Stagaman; John C. Sardella; Charles R. Spinner; Fu-Tai Liou; Peter Trefonas; Catherine C. Meister
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Paper Abstract

The effects of an increasing amount of absorptive dye contained in a positive i-line photoresist were studied for a 0.5 micrometers process on two substrates with substantially different reflectivities. Parameters such as dissolution rates, focus latitudes, and resistance to reflective notching were simulated and compared to experimental results. Reductions in resist profile and focus latitude were observed as the photoresist non-bleachable absorbance was increased, and as the substrate reflectivity was decreased. It was also found that a reduction in substrate reflectivity was more effective than increasing the resist dye loading in suppressing reflective notching of the photoresist.

Paper Details

Date Published: 15 September 1993
PDF: 12 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154790
Show Author Affiliations
Jeffrey R. Johnson, SGS-Thomson Microelectronics, Inc. (United States)
Gregory J. Stagaman, SGS-Thomson Microelectronics, Inc. (United States)
John C. Sardella, SGS-Thomson Microelectronics, Inc. (United States)
Charles R. Spinner, SGS-Thomson Microelectronics, Inc. (United States)
Fu-Tai Liou, SGS-Thomson Microelectronics, Inc. (United States)
Peter Trefonas, Shipley Co. Inc. (United States)
Catherine C. Meister, Shipley Co. Inc. (United States)

Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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