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Proceedings Paper

JESSI Project E 162: status of the deep-UV resist
Author(s): Dirk J. H. Funhoff; H. Binder; Han J. Dijkstra; Anne-Marie Goethals; A. Krause; Holger Moritz; Marijan E. Reuhman-Huisken; Reinhold Schwalm; Veerle Van Driessche; Francoise Vinet
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Paper Abstract

Within the joint European project `JESSI E 162' we pursue deep UV image processing for 0.35 micrometers lithography in chip production. To reach this goal, major advancements have to be made in three areas: stepper, resist, and track. In this paper, the status of the JESSI positive deep UV resist is presented. Based on the SUCCESS resist concept a stable resist process was developed. The major achievements are: linewidth stability for 0.35 micrometers lines and larger ones during delay times up to 120 min between exposure and PEB, 0.24 micrometers lines stable for 30 min, linearity down to 0.35 micrometers (NA 0.42), resolution of 0.22 micrometers with phase-shift mask (NA 0.42), and dry etch resistance better than conventional novolac resists.

Paper Details

Date Published: 15 September 1993
PDF: 12 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154784
Show Author Affiliations
Dirk J. H. Funhoff, BASF AG (Germany)
H. Binder, BASF AG (Germany)
Han J. Dijkstra, Philips Research Labs. (Netherlands)
Anne-Marie Goethals, Interuniv. Microelectronics Ctr. (Belgium)
A. Krause, Siemens AG (Germany)
Holger Moritz, IBM Deutschland GmbH (Malaysia)
Marijan E. Reuhman-Huisken, ASM Lithography BV (Netherlands)
Reinhold Schwalm, BASF AG (Germany)
Veerle Van Driessche, Interuniv. Microelectronics Ctr. (Belgium)
Francoise Vinet, LETI/CEA (France)

Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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