Share Email Print
cover

Proceedings Paper

Effects of fluorescence on the spatial resolution of photoresist materials
Author(s): J. J. M. Vleggaar; A. H. Huizer; Cyril A.G.O. Varma
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Five-substituted diazo-naphthoquinones (DNQs) are photolyzed in novolac and in various solvents in the presence of H2O. HPLC analysis reveals that, depending on the matrix or the solvent, a large fraction of the DNQ is converted into products other than indene carboxylic acid (ICA). These include products from fragmentation, dimerization, and azo- coupling as well as products from the reaction of the solvent with intermediates in the main photoreaction. A larger amount of fragmentation products is found by excimer laser exposure at 308 nm or 248 nm. The side products mentioned above are fluorescent and their fluorescence band overlaps with the first UV-absorption band of the DNQ. Photolysis of the photosensitizer by this fluorescence may affect the spatial resolution of a photoresist. Numerical simulation of the magnitude of this effect shows that, in practice, the conversion of photosensitizer due to fluorescence is in the order of a few percent at most.

Paper Details

Date Published: 15 September 1993
PDF: 7 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154783
Show Author Affiliations
J. J. M. Vleggaar, Univ. of Leiden (Netherlands)
A. H. Huizer, Univ. of Leiden (Netherlands)
Cyril A.G.O. Varma, Univ. of Leiden (Netherlands)


Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

© SPIE. Terms of Use
Back to Top