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Proceedings Paper

Study of trimethylsilyldiethylmine (TMSDEA) as a vapor priming agent
Author(s): Myron R. Cagan; James Bradford Gushaw; Joseph Wiseman; David C. Tien
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Paper Abstract

TMSDEA gives consistently higher contact angles than HMDS on substrates typically encountered in IC processing. The effect of water drop contact angle on resist adhesion is demonstrated. A solution of 0.5% vol TMSDEA in HMDS, used at a 50 degree(s)C hotplate temperature, was found to be optimum for a Tokyo Electron Laboratory Mk-V track vapor prime process. Observations made with three reticle levels on bare silicon do not show any exposure dose or resist profile differences between TMSDEA and HMDS vapor primed wafers.

Paper Details

Date Published: 15 September 1993
PDF: 20 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154779
Show Author Affiliations
Myron R. Cagan, Advanced Micro Devices, Inc. (United States)
James Bradford Gushaw, Advanced Micro Devices, Inc. (United States)
Joseph Wiseman, Advanced Micro Devices, Inc. (United States)
David C. Tien, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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