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Proceedings Paper

Evaluation of liquid silylated resists for 213-nm exposure
Author(s): John M. Hutchinson; K. Kalpakjian; Robert Schenker; William G. Oldham
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Paper Abstract

We explore the bulk and imaging properties of two commercially available resists, Shipley SAL-601 and AZ 5214, to 213 nm radiation operating in a liquid silylation mode. We use FTIR and thickness measurements to characterize the silicon uptake process, and explore the use of high frequency RIE etching of silylated resists to increase selectivity and reduce post- etch residues. We demonstrate sub quarter micron lithography using 213 nm exposure of a liquid silylation resist process etched in a 60 MHz O2 plasma.

Paper Details

Date Published: 15 September 1993
PDF: 12 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154777
Show Author Affiliations
John M. Hutchinson, Univ. of California/Berkeley (United States)
K. Kalpakjian, Univ. of California/Berkeley (United States)
Robert Schenker, Univ. of California/Berkeley (United States)
William G. Oldham, Univ. of California/Berkeley (United States)

Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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