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Proceedings Paper

Evaluation of a 193-nm resist and imaging system
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Paper Abstract

This paper describes the use of a 193 nm surface imaging resist in a new small-field, deep-UV projection exposure system. The 193 nm surface imaging technology utilizes commercial photoresists, in conjunction with a small field step-and-repeat exposure system. Typical processing characteristics of the imaging chemistry are presented, along with a detailed description of the projection exposure system. The resist uses vapor phase silylation with oxygen RIE developing and has been shown to provide wide focus latitude and better than 0.2 micrometers resolution. The imaging system uses a catadioptric lens with 0.5 NA for 0.20 images.

Paper Details

Date Published: 15 September 1993
PDF: 7 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154776
Show Author Affiliations
Donald W. Johnson, Microlithography Chemical Co. (United States)
David J. Elliott, Excimer Laser Systems (United States)

Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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