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Proceedings Paper

Dissolution kinetics of chemically amplified resists
Author(s): Toshiro Itani; Katsuyuki Itoh; Kunihiko Kasama
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Paper Abstract

The dissolution rate characteristics of two typical DUV chemically amplified resists (negative resist A and positive resist B) were investigated, by comparing with an i-line novolac resist (resist C). The negative resist A here was based on crosslinking between phenolic resin and melamine derivatives, and the positive resist B was composed of tert-BOC protected phenolic resin.

Paper Details

Date Published: 15 September 1993
PDF: 12 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154773
Show Author Affiliations
Toshiro Itani, NEC Corp. (Japan)
Katsuyuki Itoh, NEC Corp. (Japan)
Kunihiko Kasama, NEC Corp. (Japan)


Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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