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Proceedings Paper

Advanced i-line lithography: evaluation of a new chemical amplification negative resist
Author(s): Gilles R. Amblard; Andre P. Weill; Christophe M. Brault
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Paper Abstract

A new chemical amplification negative resist for i-line lithography (XP 2068 F1 from Shipley) is evaluated. First, a process for 0.5 micrometers features is developed and optimized, using a Tagushi matrix: the compatibility of the resist absorption with the polysilicon and aluminum reflectivities is then tested, and the high thermal stability demonstrated. Second, the process latitude is evaluated in terms of dose-focus latitude, CD linearity, and PEB temperature latitude. Finally, the suitability of the resist for gate fabrication is studied: 0.5 micrometers features are transferred into polysilicon using two different plasma chemistries.

Paper Details

Date Published: 15 September 1993
PDF: 11 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154771
Show Author Affiliations
Gilles R. Amblard, France Telecom/CNET (France)
Andre P. Weill, France Telecom/CNET (France)
Christophe M. Brault, Shipley France (France)

Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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