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Proceedings Paper

Prebake and post-exposure bake effects on the dissolution of AZ-PF
Author(s): Azalia A. Krasnoperova; Michael T. Reilly; S. Turner; L. Ocola; Franco Cerrina
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Paper Abstract

We have performed experiments to study the kinetics of dissolution of the positive chemically amplified resist AZ-PF (Hoechst AG). The resist dissolution in exposed regions was shown to have non-linear time dependence, with a delay time strongly dependent on prebake and post- exposure bake conditions. Effect of the presence of a low-solubility surface layer on patterning of submicron features as well as on roughness of the developed film has been demonstrated.

Paper Details

Date Published: 15 September 1993
PDF: 12 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154767
Show Author Affiliations
Azalia A. Krasnoperova, Univ. of Wisconsin/Madison (United States)
Michael T. Reilly, Univ. of Wisconsin/Madison (United States)
S. Turner, Univ. of Wisconsin/Madison (United States)
L. Ocola, Univ. of Wisconsin/Madison (United States)
Franco Cerrina, Univ. of Wisconsin/Madison (United States)


Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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