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Proceedings Paper

Deep-UV positive-tone dry-development process using chemically amplified resist and its application to 256 Mbit DRAM
Author(s): Woo-Sung Han; Joong-Hyun Lee; Jung-Chul Park; Choon-Geun Park; Hoyoung Kang; Young-Bum Koh; Moon-Yong Lee
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Paper Abstract

Top surface imaging and subsequent dry development were known to improve lithographic performance. Since negative working DESIRE process was introduced, several alternative methods have also been proposed. We propose a new resist system (SS-201), which is positive working in DUV lithography. We characterized this resist in view of top surface imaging (TSI) process and applied it to our 256 mega bit DRAM test device. Since conventional TSI process has a swelling problem by nature, WEBS (wet development before silylation) technique is proposed to minimize swelling. Special attention was focused on contact holes since our TSI process enables positive tone mask, which has a definite advantage in reducing potential defects in mask making.

Paper Details

Date Published: 15 September 1993
PDF: 11 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154763
Show Author Affiliations
Woo-Sung Han, Samsung Electronics Co. (South Korea)
Joong-Hyun Lee, Samsung Electronics Co. (South Korea)
Jung-Chul Park, Samsung Electronics Co. (South Korea)
Choon-Geun Park, Samsung Electronics Co. (South Korea)
Hoyoung Kang, Samsung Electronics Co. (South Korea)
Young-Bum Koh, Samsung Electronics Co. (South Korea)
Moon-Yong Lee, Samsung Electronics Co. (South Korea)


Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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