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Proceedings Paper

Comparison of liquid- and vapor-phase silylation processes for 193-nm positive-tone lithography
Author(s): Mark A. Hartney; Roderick R. Kunz; Lynn M. Eriksen; Douglas C. LaTulipe
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Paper Abstract

Liquid- and vapor-phase silylation processes are compared for a 193 nm positive-tone lithographic process using polyvinylphenol as a resist. The liquid-phase process, using a mixture of xylene, hexamethylcyclotrisilazane, and propylene glycol methyl ether acetate, was found to have higher silylation contrast, better sensitivity, and a smaller proximity effect (a decrease in silylation depth for smaller feature sizes). These factors result in a larger exposure latitude, particularly at feature sizes below 0.5 micrometers . These advantages are greatly offset, however, by the increased chemical costs, which are estimated to be more than 100 times greater than for the vapor-phase process.

Paper Details

Date Published: 15 September 1993
PDF: 9 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154761
Show Author Affiliations
Mark A. Hartney, Lincoln Lab./MIT (United States)
Roderick R. Kunz, Lincoln Lab./MIT (United States)
Lynn M. Eriksen, Lincoln Lab./MIT (United States)
Douglas C. LaTulipe, IBM Thomas J. Watson Research Ctr. (United States)

Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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