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Proceedings Paper

Simulation of spray/puddle resist development
Author(s): Stewart A. Robertson; J. Tom M. Stevenson; Robert J. Holwill; Steven G. Hansen; Rodney J. Hurditch; Mark Thirsk; Ivan S. Daraktchiev
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Paper Abstract

This work describes how spray/puddle development can be simulated using two separate sets of dissolution rate parameters. The first set of values is derived under continuous spray conditions and represents the wetting, or `spray,' period of the process; the second set, derived during stationary puddle development, deals with the remaining process period. The validity of decoupling the two development stages is supported by the good agreement between SAMPLE simulations and experimental results. Process windows and clearing doses are calculated and measured for a fixed time development process, as the spray to puddle time ratio is reduced from one to zero.

Paper Details

Date Published: 15 September 1993
PDF: 8 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154750
Show Author Affiliations
Stewart A. Robertson, Univ. of Edinburgh (United Kingdom)
J. Tom M. Stevenson, Univ. of Edinburgh (United Kingdom)
Robert J. Holwill, Univ. of Edinburgh (United Kingdom)
Steven G. Hansen, OCG Microelectronic Materials, Inc. (United States)
Rodney J. Hurditch, OCG Microelectronic Materials, Inc. (United States)
Mark Thirsk, OCG Microelectronic Materials NV (Belgium)
Ivan S. Daraktchiev, OCG Microelectronic Materials NV (Belgium)


Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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