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Proceedings Paper

Plasma deposition, characterization, and photochemistry of organosilicon hydride network polymers: versatile resists for all-dry mid-deep UV photolithography
Author(s): Timothy W. Weidman; Ajey M. Joshi
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Paper Abstract

Plasma polymerization of various mono- and di-substituted organosilanes (R1R2SiH2; R1 equals alkyl, aryl and R2 equals H or alkyl) provides an effective approach to a new class of organosilicon resists useful in all dry photolithographic processing. For example, parallel plate rf plasma deposition systems may be used to deposit photosensitive films from low power discharges in methylsilane (MeSiH3) gas between 200 and 500 mTorr. Characterization by FTIR, UV-Visible, and NMR spectroscopy suggests that methylsilane undergoes predominantly dehydrogenative coupling reactions, giving Si-Si bonded network materials of general composition [(MexSiHy)n], with x and y between 0.5 and 1.0. Such films exhibit intense, near-UV absorption band edges characteristic of materials with Si-Si backbones, and undergo photo-oxidative crosslinking with bleaching when irradiated with mid-deep UV light ((lambda) < 365 nm) in the presence of oxygen.

Paper Details

Date Published: 15 September 1993
PDF: 1 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154746
Show Author Affiliations
Timothy W. Weidman, AT&T Bell Labs. (United States)
Ajey M. Joshi, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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