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Proceedings Paper

Negative DUV photoresist for 16Mb-DRAM production and future generations
Author(s): Will Conley; William R. Brunsvold; Richard A. Ferguson; Jeffrey D. Gelorme; Steven J. Holmes; Ronald M. Martino; Magda Petryniak; Paul A. Rabidoux; Ratnam Sooriyakumaran; John L. Sturtevant
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Paper Abstract

This paper discusses a new negative tone aqueous base developable photoresist that has demonstrated excellent sub-half micron resolution with commercially available DUV (deep ultraviolet) exposure systems. This system which consists of a phenolic resin (pHOST), a glycoluril crosslinker (TMMGU), and a triflic acid generating material is currently in use for the manufacturing of 16 M b-DRAM and related CMOS logic technology. We provide supporting manufacturing data relating to our experiences with this program, along with the benefits realized by the implementation of a negative tone photoresist system.

Paper Details

Date Published: 15 September 1993
PDF: 13 pages
Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); doi: 10.1117/12.154744
Show Author Affiliations
Will Conley, IBM Corp. (United States)
William R. Brunsvold, IBM Corp. (United States)
Richard A. Ferguson, IBM Corp. (United States)
Jeffrey D. Gelorme, IBM Corp. (United States)
Steven J. Holmes, IBM Corp. (United States)
Ronald M. Martino, IBM Corp. (United States)
Magda Petryniak, IBM Corp. (United States)
Paul A. Rabidoux, IBM Corp. (United States)
Ratnam Sooriyakumaran, IBM Corp. (United States)
John L. Sturtevant, IBM Corp. (United States)


Published in SPIE Proceedings Vol. 1925:
Advances in Resist Technology and Processing X
William D. Hinsberg, Editor(s)

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