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Proceedings Paper

Dependence of IR optical properties of bulk-doped silicon on carrier concentration
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Paper Abstract

The infrared optical constants (index of refraction and extinction coefficient) and reflectance of bulk-doped n-silicon are calculated for electron concentrations up to 1021 cm-3. These calculations are based on generalized Drude-Lorentz form of dynamic dielectric function and current relaxation approach. A nonmonotonic behavior of IR absorption versus electron concentration is found. A connection between the theoretical results and available experimental data is discussed.

Paper Details

Date Published: 13 August 1993
PDF: 6 pages
Proc. SPIE 1972, 8th Meeting on Optical Engineering in Israel: Optoelectronics and Applications in Industry and Medicine, (13 August 1993); doi: 10.1117/12.151095
Show Author Affiliations
Shlomo Hava, Ben-Gurion Univ. of the Negev (Israel)
Mark Auslender, Ben-Gurion Univ. of the Negev (Israel)


Published in SPIE Proceedings Vol. 1972:
8th Meeting on Optical Engineering in Israel: Optoelectronics and Applications in Industry and Medicine
Moshe Oron; Itzhak Shladov; Yitzhak Weissman, Editor(s)

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