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Proceedings Paper

Long-wavelength IR GaAs/GaAlAs detector array
Author(s): Shmuel I. Borenstain; Naftali Paul Eisenberg
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Paper Abstract

Utilization of 8 - 10 micrometers spectral band symmetrical, and 3 - 5 micrometers band asymmetrical GaAs/GaAlAs multiple quantum well (MQW) structure for a multiple color detector is discussed. A theoretical comparison between the predicted performance of a GaAs-MQW based focal plane array (FPA) operating in the 8 - 10 micrometers band, and state of the art narrow band gap (MCT, InSb) operating in the 3.2 - 4.2 micrometers band is given. We show that because operating in the 8 - 10 micrometers band even with 0.2 quantum efficiency the noise equivalent delta temperature is better than the theoretical limit at 3.2 - 4.2 micrometers IR FPA.

Paper Details

Date Published: 13 August 1993
PDF: 11 pages
Proc. SPIE 1972, 8th Meeting on Optical Engineering in Israel: Optoelectronics and Applications in Industry and Medicine, (13 August 1993); doi: 10.1117/12.151092
Show Author Affiliations
Shmuel I. Borenstain, Jerusalem College of Technology (Israel)
Naftali Paul Eisenberg, Jerusalem College of Technology (Israel)


Published in SPIE Proceedings Vol. 1972:
8th Meeting on Optical Engineering in Israel: Optoelectronics and Applications in Industry and Medicine

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