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Proceedings Paper

Ferroelectric phase transition of Te alloy films and its optical disk properties
Author(s): Masahiro Okuda; Hiroyoshi Naito; Tatsuhiko Matsushita
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Paper Abstract

In stoichiometric GeTe-Sb2Te3 films, reversible phase change optical recording materials, Sb addition is used widely in order to improve the crystallization speed, the data retention time, and the stability of cyclic operation, but its mechanism is not clear. V-VI compounds (GeTe, SnTe) are well known as compounds in which the ferroelectric structural phase transition occurs. The dielectric constant (epsilon) 0 changes largely due to a change in the short-range order of weakly bound nearest neighbors in the crystal to more strongly bound nearest neighbors in the amorphous phase. Therefore, it is necessary to discuss the effect of Sb addition in the stoichiometric GeTe-Sb2Te3 composition upon the dynamic properties of crystallization and the dielectric constant change (Delta) (epsilon) 0 based on the ferroelectric phase transition.

Paper Details

Date Published: 13 August 1993
PDF: 6 pages
Proc. SPIE 2053, Optical Storage (ISOS '92), (13 August 1993); doi: 10.1117/12.150648
Show Author Affiliations
Masahiro Okuda, Univ. of Osaka Prefecture (Japan)
Hiroyoshi Naito, Univ. of Osaka Prefecture (Japan)
Tatsuhiko Matsushita, Osaka Sangyo Univ. (Japan)


Published in SPIE Proceedings Vol. 2053:
Optical Storage (ISOS '92)

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