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Proceedings Paper

Static and optical properties of GeTe-Sb2Te3 system films prepared by cosputtering
Author(s): Fusong S. Jiang; Yu Chen; Chuanxing Zhu; Moguang Jiang; Fuxi Gan
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Paper Abstract

A series of Ge-Sb-Te system films with good write/erase properties are prepared by the co- sputtering method. Both within 75 to approximately 200 ns pulse widths, the writing and erasing powers are 15 to approximately 22 mW and 6 to approximately 10 mW, respectively. Under these conditions, high write/erase cycles up to 105 are obtained in some film samples among the above system. Furthermore, the refractive indices are calculated according to the IR-spectra and the thickness of the film. The multilayer films with optimal recording properties can be designed by using the erasable phase change materials with suitable refractive indices and film thickness.

Paper Details

Date Published: 13 August 1993
PDF: 5 pages
Proc. SPIE 2053, Optical Storage (ISOS '92), (13 August 1993); doi: 10.1117/12.150647
Show Author Affiliations
Fusong S. Jiang, Shanghai Institute of Optics and Fine Mechanics (China)
Yu Chen, Shanghai Institute of Optics and Fine Mechanics (China)
Chuanxing Zhu, Shanghai Institute of Optics and Fine Mechanics (China)
Moguang Jiang, Shanghai Institute of Optics and Fine Mechanics (China)
Fuxi Gan, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 2053:
Optical Storage (ISOS '92)

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