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Proceedings Paper

Doping effect on optical recording film with Ge2Sb2Te5 composition
Author(s): Tatsuhiko Matsushita; Akio Suzuki; Takayuki Kamitani; Masahiro Okuda
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Paper Abstract

In stoichiometric GeTe-Sb2Te3 films, reversible phase change optical recording materials, Sb addition is used widely to improve the data retention time and the repetition cycles, but its mechanism is not clear. To clarify the effect of excess Sb, the effects of Te and Ge addition were also investigated in the compositions from the stoichiometry Ge2Sb2Te5 toward the vertices in the Ge-Te-Sb triangle. By DSC measurements, it was found that a retention ability for amorphous (`write') states related to the increase of repetition cycles is larger in the Sb addition than in the Te and Ge addition. By XRD measurements, it was understood that an optimum ratio of (Sb,Te)(beta) /GeTe(111), about 0.5 was necessary to static repetition cycles approximately 106 in the laser annealed film of 1000 angstroms thick.

Paper Details

Date Published: 13 August 1993
PDF: 6 pages
Proc. SPIE 2053, Optical Storage (ISOS '92), (13 August 1993); doi: 10.1117/12.150646
Show Author Affiliations
Tatsuhiko Matsushita, Osaka Sangyo Univ. (Japan)
Akio Suzuki, Osaka Sangyo Univ. (Japan)
Takayuki Kamitani, Osaka Sangyo Univ. (Japan)
Masahiro Okuda, Univ. of Osaka Prefecture (Japan)


Published in SPIE Proceedings Vol. 2053:
Optical Storage (ISOS '92)

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