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Proceedings Paper

Process-induced wafer distortion: its measurement and effects on overlay in stepper-based advanced lithography
Author(s): Giovanni Rivera; Paolo Canestrari
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Paper Abstract

The distortion introduced by some manufacturing steps on wafers can sometimes have a strong effect on overlay results. Thermal processes, for example, can introduce wafer distortions that cannot be completely compensated by the stepper alignment system with a consequent degradation in overlay. A new methodology which can measure the process induced distortion on wafers (exposed with a stepper system) at different steps in a standard process flow has been developed and is described in this paper. This method does not require any external metrology instruments apart from a standard precision stepper and the method is compatible with all process layers. Experimental results of application of the method on manufacturing process are presented.

Paper Details

Date Published: 8 August 1993
PDF: 8 pages
Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150477
Show Author Affiliations
Giovanni Rivera, SGS-Thomson Microelectronics (Italy)
Paolo Canestrari, SGS-Thomson Microelectronics (Italy)


Published in SPIE Proceedings Vol. 1927:
Optical/Laser Microlithography
John D. Cuthbert, Editor(s)

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