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Proceedings Paper

TAR processing for CD control in I-line and 248-nm lithography
Author(s): Christopher F. Lyons; Nicholas K. Eib; Marina V. Plat; Gary T. Spinillo; Kevin M. Welsh
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Paper Abstract

The combination of dyed photoresist and top antireflection (TAR) coatings was applied to I- line and deep-UV lithography on polysilicon. Optimization of the resist layer's absorption and application of the TAR process significantly improves CD control of submicron gate level lithography.

Paper Details

Date Published: 8 August 1993
PDF: 13 pages
Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150471
Show Author Affiliations
Christopher F. Lyons, IBM East Fishkill (United States)
Nicholas K. Eib, IBM East Fishkill (United States)
Marina V. Plat, IBM East Fishkill (United States)
Gary T. Spinillo, IBM East Fishkill (United States)
Kevin M. Welsh, IBM Semiconductor Research and Development Ctr. (United States)


Published in SPIE Proceedings Vol. 1927:
Optical/Laser Microlithography
John D. Cuthbert, Editor(s)

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