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Proceedings Paper

Fabrication of 0.1-um T-shaped gates by phase-shifting optical lithography
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Paper Abstract

We have developed a method for patterning sub-micrometer gates with T-shaped cross sections, which may be applied to manufacture high performance field effect transistors (FETs). The technique employs two exposures at the KrF excimer laser wavelength (248 nm). The first exposure uses a phase-shifting mask to pattern 0.1 micrometers isolated spaces. The resist used for the second exposure absorbs the 248 nm radiation strongly enough to produce a profile suitable for lift-off patterning.

Paper Details

Date Published: 8 August 1993
PDF: 11 pages
Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150465
Show Author Affiliations
Hua-Yu Liu, Hewlett Packard Co. (United States)
Chung-yi Su, Hewlett Packard Co. (United States)
Nigel R. Farrar, Hewlett Packard Co. (United States)
Robert E. Gleason, Hewlett Packard Co. (United States)


Published in SPIE Proceedings Vol. 1927:
Optical/Laser Microlithography
John D. Cuthbert, Editor(s)

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