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Proceedings Paper

Determine submicron process window volume with simulator tools
Author(s): Mircea V. Dusa; Linard Karklin; Mark Goldmann; William M. Gouin; George P. Mirth
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Paper Abstract

A real I-line process case study of a dense array submicron pattern is analyzed using a 3-D simulator tool, instead of the traditional `experimental trials' approach. The array consists of 2-D mask geometry with strong edge distortions at pattern XY corners. The lithography process' most common variations are considered: exposure energy and resist/nitride/oxide thin film thicknesses. Relative edge-to-center linewidth variations are the responses in a quadratic statistical experiment designed for the process window volume determination. Once the process window is built the targets for the process parameters are set and their variations within the window are monitored to desensitize the 2-D mask array edge-to-center distortions. Analysis of the process window volume allows answers to lithography process questions.

Paper Details

Date Published: 8 August 1993
PDF: 11 pages
Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150460
Show Author Affiliations
Mircea V. Dusa, Technical Instrument Co. (United States)
Linard Karklin, Silvaco International (United States)
Mark Goldmann, Silvaco International (United States)
William M. Gouin, Shipley Co. Inc. (United States)
George P. Mirth, Shipley Co. Inc. (United States)


Published in SPIE Proceedings Vol. 1927:
Optical/Laser Microlithography
John D. Cuthbert, Editor(s)

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