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Proceedings Paper

Phase-shift reticles for the fabrication of subhalf micron gates in GaAs integrated circuits using optical stepper lithography
Author(s): Joachim Schneider; Fred Becker; Brian Raynor; Birgit Weismann
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Paper Abstract

Phase shifting mask techniques using an i-line wafer stepper (ASML PAS 2500/40) were applied to our recessed gate process for the fabrication of GaAs/AlGaAs high electron mobility transistors (HEMT). Several methods for making reticles with contrast enhanced shifters, such as an extra patterned resist layer on top of the chromium reticle are presented. This paper gives a short review of the different phase shift processes and layer geometries and the advantages and disadvantages depending on application are discussed.

Paper Details

Date Published: 8 August 1993
PDF: 11 pages
Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150458
Show Author Affiliations
Joachim Schneider, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Fred Becker, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Brian Raynor, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Birgit Weismann, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)


Published in SPIE Proceedings Vol. 1927:
Optical/Laser Microlithography
John D. Cuthbert, Editor(s)

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