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Proceedings Paper

Computer-aided phase-shift mask design with reduced complexity
Author(s): Yong Liu; Avideh Zakhor
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Paper Abstract

We propose a new approach to systematic phase shift mask design. In doing so, we constrain the complexity of the mask at a pre-specified level by limiting the number of `features' on the mask. We then optimize the location, size, and phase of the features so as to achieve a desired intensity pattern on the wafer. The main advantage of this object-oriented approach over our previous pixel-based solution is that it results in substantially larger assisting phase shift features, and is therefore easier to fabricate. Our approach can also be used to design masks with proper bias and/or extension of the depth of focus. We show examples of contact hole, bright line, and chromeless line-space mask designs.

Paper Details

Date Published: 8 August 1993
PDF: 17 pages
Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150445
Show Author Affiliations
Yong Liu, Univ. of California/Berkeley (United States)
Avideh Zakhor, Univ. of California/Berkeley (United States)


Published in SPIE Proceedings Vol. 1927:
Optical/Laser Microlithography
John D. Cuthbert, Editor(s)

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