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Proceedings Paper

Intensity optimization for phase-shifting masks
Author(s): Kevin D. Lucas; Andrzej J. Strojwas; K. K. Low; Chi-Min Yuan
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Paper Abstract

The creation of stable, defect free, and correctly biased phase shifting masks (PSMs) is a difficult task. The behavior of PSMs, with their complicated structures and topographies, is highly sensitive to process parameters. A method of equalizing the intensity transmission by applying a wet etchant to the reticle and etching back both shifted and unshifted openings has been proposed. The etchback is used to reduce or alter the sidewall light scattering effects, leading to intensity equalization. The proposed method has been shown to cause intensity equalization for i-line and DUV illuminated alternating PSMs. However, many questions remain about the effective use of this method.

Paper Details

Date Published: 8 August 1993
PDF: 12 pages
Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150442
Show Author Affiliations
Kevin D. Lucas, Carnegie Mellon Univ. (United States)
Andrzej J. Strojwas, Carnegie Mellon Univ. (United States)
K. K. Low, SEMATECH and Motorola Inc. (United States)
Chi-Min Yuan, IBM East Fishkill (United States)

Published in SPIE Proceedings Vol. 1927:
Optical/Laser Microlithography
John D. Cuthbert, Editor(s)

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