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Proceedings Paper

Isolated-grouped linewidth bias on SVGL Micrascan
Author(s): Vasanti A. Deshpande; Karey L. Holland; Alex Hong
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Paper Abstract

Isolated to grouped linewidth bias is an important factor in determining the capability of an exposure tool. The process latitude can be significantly improved by minimizing the bias for small geometries (0.5 micron and less). The data presented here optimizes process related performances of SVGL Micrascan I (0.5 micron) and Micrascan II (0.35 micron). The work takes into account different contributions to the overall linewidth bias using modeling of aerial images and resist profiles. Experimental results are presented for positive and negative resists on Micrascan I, and positive resist on Micrascan II. The bias for aerial image is predicted by a model. The post-develop bias depends on the process conditions and the resist system used. Optimized processes are used on Micrascan I and II, and data on different substrates are presented.

Paper Details

Date Published: 8 August 1993
PDF: 33 pages
Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150437
Show Author Affiliations
Vasanti A. Deshpande, National Semicondutor (United States)
Karey L. Holland, IBM Corp. (United States)
Alex Hong, SEMATECH (United States)


Published in SPIE Proceedings Vol. 1927:
Optical/Laser Microlithography
John D. Cuthbert, Editor(s)

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