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Proceedings Paper

NA and optimization for high-NA i-line lithography
Author(s): Koji Yamanaka; Haruo Iwasaki; Hiroshi Nozue; Kunihiko Kasama
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Paper Abstract

NA and (sigma) will be optimized to establish 0.35 micrometers i-line single layer resist process without use of super resolution techniques. Resolution, depth of focus (DOF), and proximity effect are evaluated using a variable NA and (sigma) stepper. NA is varied by an aperture stop in a projection lens. (sigma) is varied by not only an aperture stop (mechanical (sigma) ) in an illumination optics but also intensity distribution of illumination at the aperture stop (effective (sigma) ). Optimized NA and (sigma) are applied to a newly developed high resolution resist. Obtained results show that high NA and high (sigma) stepper has a great availability for 0.35 micrometers device fabrication.

Paper Details

Date Published: 8 August 1993
PDF: 10 pages
Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150435
Show Author Affiliations
Koji Yamanaka, NEC Corp. (Japan)
Haruo Iwasaki, NEC Corp. (Japan)
Hiroshi Nozue, NEC Corp. (Japan)
Kunihiko Kasama, NEC Corp. (Japan)


Published in SPIE Proceedings Vol. 1927:
Optical/Laser Microlithography
John D. Cuthbert, Editor(s)

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