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Proceedings Paper

I-line lithography for subhalf-micron design rules
Author(s): Barton A. Katz; Leif R. Sloan; James Foster; Richard Rogoff; Ronfu Chu; Daniel Hao-Tien Lee
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Paper Abstract

I-line lithography, together with single-layer resist processes, practically, have been limited to 0.45 micrometers design rules in the semiconductor industry. For design rules of 0.4 micrometers and below, several contrast enhanced methods have been proposed for i-line lithography, mainly phase shift masks, modified illumination methods, and surface imaging techniques, etc. This paper describes the sub-half micron process performance of 0.48 NA and 0.54 i-line steppers on various topography wafers which are suitable for 0.35 - 0.40 micrometers and 0.40 - 0.45 micrometers design rules. The latest high performance i-line resist and high contrast developing scheme have been chosen for this study. The process windows for the sub-half micron features on various topography wafers are reported. The feasibility to use these processes for the production with lower K1 is also addressed.

Paper Details

Date Published: 8 August 1993
PDF: 10 pages
Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150434
Show Author Affiliations
Barton A. Katz, ASM Lithography, Inc. (United States)
Leif R. Sloan, ASM Lithography, Inc. (United States)
James Foster, ASM Lithography, Inc. (United States)
Richard Rogoff, ASM Lithography, Inc. (United States)
Ronfu Chu, ASM Lithography, Inc. (United States)
Daniel Hao-Tien Lee, Industrial Technology Research Institute (Taiwan)

Published in SPIE Proceedings Vol. 1927:
Optical/Laser Microlithography
John D. Cuthbert, Editor(s)

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