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Proceedings Paper

0.35-micron excimer DUV photolithography process
Author(s): Donald O. Arugu; Kent G. Green; Peter D. Nunan; Marcel Terbeek; Sue E. Crank; Lam Ta; Elliott Sean Capsuto; Satyendra S. Sethi
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Paper Abstract

It is becoming increasingly clear that DUV excimer laser based imaging will be one of the technologies for printing sub-half micron devices. This paper reports the investigation of 0.35 micrometers photolithography process using chemically amplified DUV resists on organic anti- reflective coating (ARC). Production data from the GCA XLS excimer DUV tools with nominal gate width of 0.35 micrometers lines, 0.45 micrometers spaces was studied to demonstrate device production worthiness. This data included electrical yield information for device characterization. Exposure overlay was done by mixing and matching DUV and I-line GCA steppers for critical and non critical levels respectively. Working isolated transistors down to 0.2 micrometers have been demonstrated.

Paper Details

Date Published: 8 August 1993
PDF: 11 pages
Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150433
Show Author Affiliations
Donald O. Arugu, SEMATECH Inc. (United States)
Kent G. Green, SEMATECH Inc. (United States)
Peter D. Nunan, SEMATECH Inc. (United States)
Marcel Terbeek, SEMATECH Inc. (United States)
Sue E. Crank, SEMATECH Inc. (United States)
Lam Ta, SEMATECH Inc. (United States)
Elliott Sean Capsuto, Brewer Science, Inc. (United States)
Satyendra S. Sethi, National Semiconductor Corp. (United States)

Published in SPIE Proceedings Vol. 1927:
Optical/Laser Microlithography
John D. Cuthbert, Editor(s)

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