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Proceedings Paper

Practical resolution enhancement effect by new complete antireflective layer in KrF excimer laser lithography
Author(s): Tohru Ogawa; Mitsumori Kimura; Tetsuo Gocho; Yoichi Tomo; Toshiro Tsumori
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Paper Abstract

A new complete anti-reflective layer (ARL) for KrF excimer laser lithography, which becomes an excimer laser lithography to a practical mass production tool beyond 0.35 micrometers rule devices, is developed. This new ARL, whose material is a type of hydro silicon oxynitride film (SiOxNy:H), can be applied to tungsten silicide (W-Si) and even to aluminum silicon (Al- Si) substrates by controlling deposition conditions in plasma enhanced chemical vapor deposition systems. Using this SiOxNy:H film with 30 nm and 25 nm thicknesses on W-Si and Al-Si substrates respectively, critical dimension variations for both substrates are drastically reduced to within 0.02 micrometers for 0.30 micrometers imaging. On actual device structures, with these SiOxNy:H film as an ARL, notching effects by halation are completely reduced. Moreover, these SiOxNy:H film can not only be deposited with topographical uniformity but also etched with conventional SiO2 etching conditions. Another advantage with ARL is a depth of focus enhancement effect. With a SiOxNy:H film depth of focus for the critical dimension is enlarged more than 23% for 0.35 micrometers line and space patterns. Accordingly, practical resolution is enhanced. From the above effect, the limitations of KrF excimer laser lithography for ideal substrate conditions are considered from the point of view of optimal projection lens NA for various feature sizes.

Paper Details

Date Published: 8 August 1993
PDF: 12 pages
Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150431
Show Author Affiliations
Tohru Ogawa, Sony Corp. (Japan)
Mitsumori Kimura, Sony Corp. (Japan)
Tetsuo Gocho, Sony Corp. (Japan)
Yoichi Tomo, Sony Corp. (Japan)
Toshiro Tsumori, Sony Corp. (Japan)


Published in SPIE Proceedings Vol. 1927:
Optical/Laser Microlithography
John D. Cuthbert, Editor(s)

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