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Proceedings Paper

Quarter-micron lithography using a deep-UV stepper with modified illumination
Author(s): Anthony Yen; William N. Partlo; Shane R. Palmer; Maureen A. Hanratty; Michael C. Tipton
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Paper Abstract

We have investigated the use of annular illumination on a KrF excimer laser stepper ((lambda) equals 248 nm) working near the resolution limit of the lens. The numerical aperture of the lens was 0.48 and the illuminator-lens combination produced a partial coherence of 0.44. With a central obscuration equal to 75% of the diameter of the illuminator aperture in place and using a surface-imaging resist process, we have increased the depth of focus for 0.25 micrometers dense lines and spaces from 0.9 micrometers at one point in the imaging field to 1.5 micrometers . Performance for dense contacts was also improved. These improvements demonstrate the feasibility of 0.25 micrometers technology with deep-UV lithography.

Paper Details

Date Published: 8 August 1993
PDF: 9 pages
Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); doi: 10.1117/12.150421
Show Author Affiliations
Anthony Yen, Texas Instruments Inc. (United States)
William N. Partlo, GCA/Tropel (United States)
Shane R. Palmer, Texas Instruments Inc. (United States)
Maureen A. Hanratty, Texas Instruments Inc. (United States)
Michael C. Tipton, Texas Instruments Inc. (United States)


Published in SPIE Proceedings Vol. 1927:
Optical/Laser Microlithography
John D. Cuthbert, Editor(s)

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