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Proceedings Paper

Preparation of single-domain KTiOAsO4 crystals for device application
Author(s): Kevin L. K. Cheng; Lap-Tak A. Cheng; John D. Bierlein; W. Bindloss; Joseph C. Calabrese; J. Galperin; A. A. Ballman
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Paper Abstract

We report here the crystal growth and characterization of single domain KTiOAsO4 crystals suitable for devices application. The presence of inversion domains were established by various techniques including piezoelectric resonances and electrostatic toning. Techniques for removing these domains from as grown crystals were discussed.

Paper Details

Date Published: 21 July 1993
PDF: 3 pages
Proc. SPIE 1863, Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals II, (21 July 1993); doi: 10.1117/12.149286
Show Author Affiliations
Kevin L. K. Cheng, E.I. du Pont de Nemours & Co., Inc. (United States)
Lap-Tak A. Cheng, E.I. du Pont de Nemours & Co., Inc. (United States)
John D. Bierlein, E.I. du Pont de Nemours & Co., Inc. (United States)
W. Bindloss, E.I. du Pont de Nemours & Co., Inc. (United States)
Joseph C. Calabrese, E.I. du Pont de Nemours & Co., Inc. (United States)
J. Galperin, E.I. du Pont de Nemours & Co., Inc. (United States)
A. A. Ballman, A2B Crystal Enterprises (United States)


Published in SPIE Proceedings Vol. 1863:
Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals II
Bruce H. T. Chai, Editor(s)

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