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Proceedings Paper

Growth of low-scattering-loss Cr3+:LiSrAlF6 single crystals
Author(s): Bruce H. T. Chai; J. Lefaucheur; Anh-Tuyet Pham; V. Castillo
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Paper Abstract

The growth of high quality, low scattering loss Cr doped LiSAF single crystals by Czochralski pulling technique is described. Scattering loss as low as 0.1%/cm has achieved. The loss depends on the Cr doping concentration. We found that maintaining flat interface growth is crucial to reduce scattering loss and minimize wavefront distortion. These low loss materials provide true prospect of all solid state diode pumped tunable laser as well as ultrashort pulse generation and amplification.

Paper Details

Date Published: 21 July 1993
PDF: 6 pages
Proc. SPIE 1863, Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals II, (21 July 1993); doi: 10.1117/12.149283
Show Author Affiliations
Bruce H. T. Chai, CREOL/Univ. of Central Florida (United States)
J. Lefaucheur, CREOL/Univ. of Central Florida (United States)
Anh-Tuyet Pham, CREOL/Univ. of Central Florida (United States)
V. Castillo, Lightning Optical Corp. (United States)


Published in SPIE Proceedings Vol. 1863:
Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals II
Bruce H. T. Chai, Editor(s)

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