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Proceedings Paper

Growth of high-quality single crystals of KYF4 by TSSG method
Author(s): Bruce H. T. Chai; J. Lefaucheur; Anh-Tuyet Pham; G. B. Loutts; John F. Nicholls
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Paper Abstract

We report for the first time the growth of large size high quality single crystals of KYF4 (KYF) by TSSG method using the conventional weight-feed-back automatic diameter control Czochralski puller. We have made major revision of the KF-YF3 phase diagram and showed that KYF melts peritectically. The crystals can accommodate large size variations of the dopants. We were able to dope it with a large number of rare earth elements. The crystal has long fluorescence lifetime and weak phonon energy making it ideal as upconversion laser host.

Paper Details

Date Published: 21 July 1993
PDF: 5 pages
Proc. SPIE 1863, Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals II, (21 July 1993); doi: 10.1117/12.149271
Show Author Affiliations
Bruce H. T. Chai, CREOL/Univ. of Central Florida (United States)
J. Lefaucheur, CREOL/Univ. of Central Florida (United States)
Anh-Tuyet Pham, CREOL/Univ. of Central Florida (United States)
G. B. Loutts, CREOL/Univ. of Central Florida (United States)
John F. Nicholls, CREOL/Univ. of Central Florida (United Kingdom)


Published in SPIE Proceedings Vol. 1863:
Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals II
Bruce H. T. Chai, Editor(s)

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