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Proceedings Paper

Growth of Nd:GdLiF4 single crystals
Author(s): Bruce H. T. Chai; J. Lefaucheur; Anh-Tuyet Pham
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Paper Abstract

We report for the first time the growth of high quality single crystals of Nd doped GdLiF4. We have revised the phase diagram of this system to search for optimum growth composition. The crystals were grown from a highly incongruent peritectic melt using the conventional weight-feed-back automatic diameter control Czoochralski puller. Higher Nd doping (up to 4%) was achieved and the lasing performance was encouraging. We believe that the crystal has the potential to be used for diode pumped miniature laser applications.

Paper Details

Date Published: 21 July 1993
PDF: 4 pages
Proc. SPIE 1863, Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals II, (21 July 1993); doi: 10.1117/12.149269
Show Author Affiliations
Bruce H. T. Chai, CREOL/Univ. of Central Florida (United States)
J. Lefaucheur, CREOL/Univ. of Central Florida (United States)
Anh-Tuyet Pham, CREOL/Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 1863:
Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals II
Bruce H. T. Chai, Editor(s)

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