Share Email Print
cover

Proceedings Paper

Growth of Cr4+:Mg2SiO4 crystal by Czochralski method
Author(s): Yinchun Hou; Hongbin Zhu; Shenghui Yan; Siting Wang; Bing Hu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Cr4+:Mg2SiO4 crystals have been grown by a Czochralski method with a radio frequency generator of 150 KHz. The ambient gas is a mixture of N2 + O2 of total pressure 1.4 atm.. The oxidizing atmosphere is employed to promote the Cr4+ concentration in the crystal. A special growth procedure is adopted and the outer surface of the Ir crucible is coated with a ZrO2 layer to reduce Ir consumption. The primary laser testing has been operated using Q-switch Nd:YAG laser as a pumping source. The maximum output energy is 11.5 mJ for 70 mJ incident energy. The laser wavelength can be tuned from 1167 nm to 1332 nm. The second harmonic generation with BBO crystal as a frequency doubler results in 584 nm to 666 nm laser beams.

Paper Details

Date Published: 21 July 1993
PDF: 6 pages
Proc. SPIE 1863, Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals II, (21 July 1993); doi: 10.1117/12.149264
Show Author Affiliations
Yinchun Hou, Shanghai Institute of Optics and Fine Mechanics (China)
Hongbin Zhu, Shanghai Institute of Optics and Fine Mechanics (China)
Shenghui Yan, Shanghai Institute of Optics and Fine Mechanics (China)
Siting Wang, Shanghai Institute of Optics and Fine Mechanics (China)
Bing Hu, Shanghai Institute of Optics and Fine Mechanics (United States)


Published in SPIE Proceedings Vol. 1863:
Growth, Characterization, and Applications of Laser Host and Nonlinear Crystals II
Bruce H. T. Chai, Editor(s)

© SPIE. Terms of Use
Back to Top