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Proceedings Paper

Postexposure bake as a process-control parameter for chemically amplified photoresist
Author(s): John L. Sturtevant; Steven J. Holmes; Theodore G. Van Kessel; Philip C. D. Hobbs; Jerry C. Shaw; Robert R. Jackson
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Paper Abstract

A new method is described for the real-time in-line control of critical dimensions for positive- tone chemically amplified resist systems. The technique relies on the generation of a diffraction grating in the resist film when a latent image appears during the post-exposure bake. A simple optical illumination/collection arrangement allows the diffracted signal to be measured during the post-exposure bake. This signal can be correlated to linewidths when measured by a non-destructive SEM. The result is a post-exposure bake time that can be used to correct for exposure-and-bake temperature variations to conveniently provide overall process control. Results generated by a prototype system are presented for a variety of 0.5- micrometers mask levels and process conditions.

Paper Details

Date Published: 4 August 1993
PDF: 9 pages
Proc. SPIE 1926, Integrated Circuit Metrology, Inspection, and Process Control VII, (4 August 1993); doi: 10.1117/12.149018
Show Author Affiliations
John L. Sturtevant, IBM Technology Products Div. (United States)
Steven J. Holmes, IBM Technology Products Div. (United States)
Theodore G. Van Kessel, IBM Thomas J. Watson Research Ctr. (United States)
Philip C. D. Hobbs, IBM Thomas J. Watson Research Ctr. (United States)
Jerry C. Shaw, IBM Thomas J. Watson Research Ctr. (United States)
Robert R. Jackson, IBM Thomas J. Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 1926:
Integrated Circuit Metrology, Inspection, and Process Control VII
Michael T. Postek, Editor(s)

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