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Proceedings Paper

Integrated circuit wafer reflectivity measurement in the UV and DUV and its application for ARC characterization
Author(s): Bhanwar Singh; Sesh Ramaswami; Warren Lin; Nagesh Avadhany
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Paper Abstract

Linewidth control over reflective topography has become a major problem in sub-half micron optical lithography. Reflective notching and thin film interference are the major contributors to linewidth variation. In this paper, we examined a simple and practical approach to characterize photoresist swing curve and anti-reflecting coating materials using reflectance measurements. An optimization of titanium nitride (TiN) anti-reflecting coating (ARC) thickness for G-line, I- line and DUV wavelengths was also examined for aluminum substrates. Aluminum film reflectivity shows a correlation with surface roughness and reflectance measurement technique can be utilized to monitor thin films.

Paper Details

Date Published: 4 August 1993
PDF: 13 pages
Proc. SPIE 1926, Integrated Circuit Metrology, Inspection, and Process Control VII, (4 August 1993); doi: 10.1117/12.149012
Show Author Affiliations
Bhanwar Singh, Advanced Micro Devices, Inc. (United States)
Sesh Ramaswami, Advanced Micro Devices, Inc. (United States)
Warren Lin, Nanometrics Inc. (United States)
Nagesh Avadhany, Nanometrics Inc. (United States)


Published in SPIE Proceedings Vol. 1926:
Integrated Circuit Metrology, Inspection, and Process Control VII
Michael T. Postek, Editor(s)

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