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Proceedings Paper

Application-specific microscopy for half-micron metrology
Author(s): Mircea V. Dusa; Guoqing Xiao; Frank S. Menagh; Erik H. Rauch; William M. Gouin; George P. Mirth
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Paper Abstract

A new concept, the 'Application Specific Microscopy', is proposed here for today's complex lithography patterns containing 3D halfmicron information. The concept is based on the fact that a consistent 2D metrology process is no longer sufficient to characterize samples with 3D information. The Z information becomes necessary for the correlation between metrology measurement results to the sample XYZ topography. Also a complete Z information helps both metrology and lithography engineers to trace process variations. the Z information is in fact the FOCUS parameter. It becomes the most critical parameter in the XY halfmicron metrology process, similar to optical halfmicron lithography process. The Z information is acquired when the sample is scanned in Z. A Z-scan capability with nanometer resolution was used here to acquire the necessary Z information, an information that was then used to determine metrology system Depth Response Function. The Depth Response Function was used to monitor focus and to manipulate the metrology system for optimum performance on a particular sample.

Paper Details

Date Published: 4 August 1993
PDF: 12 pages
Proc. SPIE 1926, Integrated Circuit Metrology, Inspection, and Process Control VII, (4 August 1993); doi: 10.1117/12.149008
Show Author Affiliations
Mircea V. Dusa, Technical Instrument Co. (United States)
Guoqing Xiao, Technical Instrument Co. (United States)
Frank S. Menagh, Technical Instrument Co. (United States)
Erik H. Rauch, Technical Instrument Co. (United States)
William M. Gouin, Shipley Co., Inc. (United States)
George P. Mirth, Shipley Co., Inc. (United States)


Published in SPIE Proceedings Vol. 1926:
Integrated Circuit Metrology, Inspection, and Process Control VII
Michael T. Postek, Editor(s)

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