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Proceedings Paper

Printability of submicron 5x reticle defects at i-line and DUV exposure wavelengths
Author(s): Brian Martin; Francis N. Goodall
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Paper Abstract

Printability of sub-micron 5X reticle defects at i-line and duv. wavelengths is assessed by use of a specifically designed test reticle incorporating defects whose size, and proximity to adjacent features, varies within sub-micron line/space arrays. Results are presented by plotting minimum resolved defect vs. array linewidth for both adjacent and isolated defect sites. Results on defect printability enable future reticle procurement specifications to be established. Results at i-line have been successfully modelled using SOLID which has a powerful graphics package enabling results to be displayed in 3D.

Paper Details

Date Published: 4 August 1993
PDF: 12 pages
Proc. SPIE 1926, Integrated Circuit Metrology, Inspection, and Process Control VII, (4 August 1993); doi: 10.1117/12.148990
Show Author Affiliations
Brian Martin, GEC Plessey Semiconductors Ltd. (United Kingdom)
Francis N. Goodall, Rutherford Appleton Lab. (United Kingdom)

Published in SPIE Proceedings Vol. 1926:
Integrated Circuit Metrology, Inspection, and Process Control VII
Michael T. Postek, Editor(s)

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