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Proceedings Paper

SEM inspection methods for process development and manufacturing of a 0.25-um T-gate GaAs MESFET fabrication
Author(s): Bret A. Small; Rick D. Hudgens; Shirley A. Meyer
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Paper Abstract

Several SEM inspection techniques for the process development of a 0.25 micrometers T-gate MESFET process have been successfully utilized. The transition of these techniques to a manufacturing process with SPC monitoring will also be discussed. The unique challenges of imaging several different Ebeam resists, and their interaction with the scanning electron microscope will also be discussed.

Paper Details

Date Published: 4 August 1993
PDF: 4 pages
Proc. SPIE 1926, Integrated Circuit Metrology, Inspection, and Process Control VII, (4 August 1993); doi: 10.1117/12.148948
Show Author Affiliations
Bret A. Small, Texas Instruments Inc. (United States)
Rick D. Hudgens, Texas Instruments Inc. (United States)
Shirley A. Meyer, Texas Instruments Inc. (United States)

Published in SPIE Proceedings Vol. 1926:
Integrated Circuit Metrology, Inspection, and Process Control VII
Michael T. Postek, Editor(s)

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