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Proceedings Paper

Process optimization of APEX-E
Author(s): Karen E. Petrillo
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Paper Abstract

Excimer laser lithography combined with chemically amplified resists offers a viable approach to lithography at 0.5 micrometers and below. APEX-E, a positive tone deep-uv resist used in conjunction with a 0.44 NA excimer laser stepper is capable of 0.35 micrometers resolution. To improve the process window for this resist while reducing the performance variability, the Taguchi method of quality control was employed. The baseline process for APEX-E was characterized, then subsequently used as a comparison to the optimized process as suggested by the Taguchi experiments.

Paper Details

Date Published: 4 August 1993
PDF: 12 pages
Proc. SPIE 1926, Integrated Circuit Metrology, Inspection, and Process Control VII, (4 August 1993); doi: 10.1117/12.148936
Show Author Affiliations
Karen E. Petrillo, IBM Thomas J. Watson Research Ctr. (United States)

Published in SPIE Proceedings Vol. 1926:
Integrated Circuit Metrology, Inspection, and Process Control VII
Michael T. Postek, Editor(s)

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