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Proceedings Paper

Recent developments in stepper-focus and overlay-control metrology for subhalf-micron manufacturing applications
Author(s): Richard F. Hollman; Paul M. Bischoff; Paul Hellebrekers
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Paper Abstract

Current generation of advanced IC's require sub-half-micron-resolution photolithography over large exposure fields, with device overlay tolerances of less than 100 nanometers. Achieving this performance in high-volume manufacturing will challenge the focus and overlay control capabilities of optical reduction steppers. This paper presents new metrological approaches to achieving the required focus and overlay control performance. A latent image focus measurement technique is described, which has been used extensively to characterize die levelling performance. To improve overlay capability on back end levels (especially metal), a combined bright field/dark field alignment system has been developed. Data on alignment performance, and optimization of alignment mark design for bright field, will be presented.

Paper Details

Date Published: 4 August 1993
PDF: 10 pages
Proc. SPIE 1926, Integrated Circuit Metrology, Inspection, and Process Control VII, (4 August 1993); doi: 10.1117/12.148934
Show Author Affiliations
Richard F. Hollman, GCA, a Unit of General Signal (United States)
Paul M. Bischoff, GCA, a Unit of General Signal (United States)
Paul Hellebrekers, GCA, a Unit of General Signal (United States)


Published in SPIE Proceedings Vol. 1926:
Integrated Circuit Metrology, Inspection, and Process Control VII
Michael T. Postek, Editor(s)

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