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Proceedings Paper

Electrolytic gate for quantum efficiency enhancement in thinned CCDs
Author(s): Michael A. Damento; Mary Watson; Gary R. Sims
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Paper Abstract

A transparent, semi-solid, electrolytic gate has been applied to the backside of thinned CCDs for quantum efficiency enhancement. The gate is applied by spreading a water solution of phosphoric acid and polyvinyl alcohol onto the silicon and drying it to form a thin plastic film. When a negative voltage of less than one volt with respect to substrate ground is applied to the gate, a QE pinned condition (100% internal quantum efficiency) is produced. An insulating layer is not needed with this gate (as it is with electronic conductors) since a threshold voltage of about 1.2 V is required before conduction into the silicon can occur. The mechanism of charging is believed to involve a pile-up of negative ions at the silicon-electrolyte interface which compensates for the positive oxide charge. Conduction into the silicon at low voltages is restricted by the oxidation potential of the negative ions in the electrolyte.

Paper Details

Date Published: 12 July 1993
PDF: 6 pages
Proc. SPIE 1900, Charge-Coupled Devices and Solid State Optical Sensors III, (12 July 1993); doi: 10.1117/12.148599
Show Author Affiliations
Michael A. Damento, Photometrics Ltd. (United States)
Mary Watson, Photometrics Ltd. (United States)
Gary R. Sims, Photometrics Ltd. (United States)

Published in SPIE Proceedings Vol. 1900:
Charge-Coupled Devices and Solid State Optical Sensors III
Morley M. Blouke, Editor(s)

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