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Proceedings Paper

26.2-million-pixel CCD image sensor
Author(s): Savvas G. Chamberlain; Stacy R. Kamasz; Shing-Fat Fred Ma; William D. Washkurak; Michael G. Farrier; P. Tom Jenkins
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Paper Abstract

A 26.2 million pixel CCD Imager Sensor has been successfully designed and fabricated. The device uses a full frame architecture with 5,120 X 5,120 pixels organization. With a pitch of 12 microns in both dimensions, the overall image zone is 61.44 mm X 61.44 mm. The charge storage capacity of each photosite is greater than 130,000 electrons and the minimum detectable charge is 50 electrons when correlated double sampling is used. The device is also capable of reduced dark current operation of 60 pA/cm2 when operated in the surface inversion mode. The device has four outputs, each of which can operate up to 12 MHz.

Paper Details

Date Published: 12 July 1993
PDF: 11 pages
Proc. SPIE 1900, Charge-Coupled Devices and Solid State Optical Sensors III, (12 July 1993); doi: 10.1117/12.148596
Show Author Affiliations
Savvas G. Chamberlain, DALSA, Inc. (Canada)
Stacy R. Kamasz, DALSA, Inc. (Canada)
Shing-Fat Fred Ma, DALSA, Inc. (Canada)
William D. Washkurak, DALSA, Inc. (Canada)
Michael G. Farrier, DALSA, Inc. (Canada)
P. Tom Jenkins, DALSA, Inc. (Canada)

Published in SPIE Proceedings Vol. 1900:
Charge-Coupled Devices and Solid State Optical Sensors III
Morley M. Blouke, Editor(s)

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