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Proceedings Paper

Design and electro-optical characterization of a 1024 x 1024 imager
Author(s): Stacy R. Kamasz; William D. Washkurak; Gareth P. Weale; Shing-Fat Fred Ma; Charles R. Smith; Savvas G. Chamberlain
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Paper Abstract

Large format charge coupled device area arrays (1 million pixels or more) have proven to be useful in scientific, medical and industrial imaging applications. DALSA has developed a 1024 X 1024 pixel single output, full-frame area array incorporating 3-poly 3-phase buried channel NMOS CCD shift registers and a 10 micrometers X 10 micrometers pixel pitch. The device was fabricated with an additional buried channel implant (notch) in the pixel columns to increase charge storage capacity. In this paper the authors discuss the design and initial performance evaluation of the device. Preliminary measurements of the pixel charge storage capacity indicate 70,000 e- without notch and 140,000 e- with notch. The results indicate that the sensor should be suitable for a variety of applications such as high resolution machine vision, still photography, and scientific imaging.

Paper Details

Date Published: 12 July 1993
PDF: 10 pages
Proc. SPIE 1900, Charge-Coupled Devices and Solid State Optical Sensors III, (12 July 1993); doi: 10.1117/12.148593
Show Author Affiliations
Stacy R. Kamasz, DALSA, Inc. (Canada)
William D. Washkurak, DALSA, Inc. (Canada)
Gareth P. Weale, DALSA, Inc. (Canada)
Shing-Fat Fred Ma, DALSA, Inc. (Canada)
Charles R. Smith, DALSA, Inc. (Canada)
Savvas G. Chamberlain, DALSA, Inc. (Canada)


Published in SPIE Proceedings Vol. 1900:
Charge-Coupled Devices and Solid State Optical Sensors III
Morley M. Blouke, Editor(s)

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